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Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J

Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J

Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J
Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J

Large Image :  Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J Get Best Price

Product Details:
Place of Origin: CHINA
Brand Name: THINKCHIP
Model Number: ES2A ES2B ES2C ES2D ES2E ES2G ES2J
Payment & Shipping Terms:
Minimum Order Quantity: 100PCS
Price: negotiable
Packaging Details: Tape & Reel (TR) / Cut Tape (CT)
Delivery Time: 1-2 WORK DAYS
Payment Terms: T/T, Western Union,paypal, MoneyGram
Supply Ability: 9,900,000 pcs/weekly
Detailed Product Description
TYPE: ES2A Package: SMB
IR(uA): 5uA VF(V): 0.95V
VRRM(V): 50V IFSM(A): 50A
Trr(ns): 35NS IO(A): 2A
High Light:

fast recovery rectifier diode

,

high power rectifier diode

ES2A ES2B ES2C ES2D ES2E ES2G ES2J Fast Recorvery Diode SMB DO-214AA

 

Type Package VRRM(V) IO(A) IFSM(A) Trr(ns) VF(V) IR(uA)
ES2A SMB 50 2 50 35 0.95 5
ES2B SMB 100 2 50 35 0.95 5
ES2C SMB 150 2 50 35 0.95 5
ES2D SMB 200 2 50 35 0.95 5
ES2E SMB 300 2 50 35 1.25 5
ES2G SMB 400 2 50 35 1.25 5
ES2J SMB 600 2 50 35 1.7 5
ER2A SMB 50 2 50 35 0.95 5
ER2B SMB 100 2 50 35 0.95 5
ER2C SMB 150 2 50 35 0.95 5
ER2D SMB 200 2 50 35 0.95 5
ER2E SMB 300 2 50 35 1.25 5
ER2G SMB 400 2 50 35 1.25 5
ER2J SMB 600 2 50 35 1.7 5

 

 

Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.

 


Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J 0Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J 1Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J 2

 

Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J 3Semiconductor Fast Recovery Diode SMB DO-214AA ES2A ES2B ES2C ES2D ES2E ES2G ES2J 4

 

 

 

Contact Details
G-Resource Electronics Co.,Ltd

Contact Person: Jenny

Tel: 86-15818536604

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