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Home ProductsFast Recovery Diode

ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA

ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA

ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA
ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA

Large Image :  ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA Get Best Price

Product Details:
Place of Origin: CHINA
Brand Name: THINKCHIP
Model Number: ER1A ER1B ER1C ER1D ER1E ER1G ER1J
Payment & Shipping Terms:
Minimum Order Quantity: 100PCS
Price: negotiable
Packaging Details: Tape & Reel (TR) / Cut Tape (CT)
Delivery Time: 1-2 WORK DAYS
Payment Terms: T/T, Western Union,paypal, MoneyGram
Supply Ability: 9,900,000 pcs/weekly
Detailed Product Description
TYPE: ER1A IR(uA): 5
VF(V): 0.95 VRRM(V): 50
IFSM(A): 30 Trr(ns): 35
IO(A): 1 Package: SMA
High Light:

fast recovery rectifier diode

,

high power rectifier diode

ER1A ER1B ER1C ER1D ER1E ER1G ER1J Fast Recorvery Diode Fast Switching Diode DO-214AC SMA

 

Type Package VRRM(V) IO(A) IFSM(A) Trr(ns) VF(V) IR(uA)
ER1A SMA 50 1 30 35 0.95 5
ER1B SMA 100 1 30 35 0.95 5
ER1C SMA 150 1 30 35 0.95 5
ER1D SMA 200 1 30 35 0.95 5
ER1E SMA 300 1 30 35 1.25 5
ER1G SMA 400 1 30 35 1.25 5
ER1J SMA 600 1 30 35 1.7 5
 

 

Fast recovery diode (FRD) is a kind of semiconductor diode with good switching characteristics and short reverse recovery time, which is mainly used in switching power supply, PWM pulse width modulator, inverter and other electronic circuits, as a high frequency rectifier diode, secondary diode or damping diode. The internal structure of fast recovery diode is different from ordinary p-junction diode. It belongs to PIN junction diode, that is, base region I is added between p-type silicon material and n-type silicon material to form PIN silicon chip. Because the base area is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage (withstand voltage value) is high.

 

FEATURES
 Glass Passivated Die Construction
 Super-Fast Recovery Time For High Efficiency
 Low Forward Voltage Drop and High Current Capability
 Ideally Suited for Automated Assembly
 Plastic Material: UL Flammability Classification Rating 94V-0
MECHANICAL DATA
 Case: DO-214AC Molded plastic
 Terminals: Pure tin plated, lead free
 Polarity: Indicated by cathode band
 Weight: 70mg (approx.)


ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA 0ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA 1ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA 2

 

ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA 3ER1A ER1B ER1C ER1D ER1E ER1G ER1J Ultra Fast Switching Diode DO-214AC SMA 4

 

 

 

Contact Details
G-Resource Electronics Co.,Ltd

Contact Person: Jenny

Tel: 86-15818536604

Send your inquiry directly to us