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Home ProductsIGBT Power Module

BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount

BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount

BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount
BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount

Large Image :  BSM25GD120DN2 High Voltage Igbt Full Bridge 1200V 35A 200W Chassis Mount Get Best Price

Product Details:
Place of Origin: Japan
Brand Name: Infineon
Model Number: BSM25GD120DN2
Payment & Shipping Terms:
Minimum Order Quantity: 1 Pcs
Price: negotiable
Packaging Details: Module with Box
Delivery Time: 1-2 working days
Payment Terms: T/T, Western Union,paypal
Supply Ability: 20 PCS
Detailed Product Description
High Light:

insulated gate bipolar transistor

,

high voltage igbt

Manufacturer Infineon Technologies
Series -
Part Status Not For New Designs
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Power - Max 200W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Current - Collector Cutoff (Max) 800µA
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Contact Details
G-Resource Electronics Co.,Ltd

Contact Person: Jenny

Tel: 86-15818536604

Send your inquiry directly to us